Ultrafast coherent dynamics of fano resonances in semiconductors

Ultrafast coherent dynamics of fano resonances in semiconductors

We present the first investigation of the ultrafast dynamics of the coherent emission from Fano resonances in semiconductors. Time-resolved femtosecond four-wave mixing (FWM) in GaAs under high magnetic field shows that dephasing is dominated by the coupling between discrete states and continua resp...

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Veröffentlicht in:Physical review letters 1995-01, Vol.74 (3), p.470-473
Hauptverfasser: Siegner, U, Mycek, M, Glutsch, S, Chemla, DS
Format: Artikel
Sprache:eng
Schlagworte:
ARSENIC COMPOUNDS
ARSENIDES
COHERENT RADIATION
DYNAMICS
ELECTROMAGNETIC RADIATION
EMISSION SPECTRA
FANO FACTOR
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFERENCE
MATERIALS SCIENCE
MECHANICS
PHOTO-INDUCED TRANSIENT SPECTROSCOPY
PNICTIDES
RADIATIONS
RESONANCE
SPECTRA
SPECTROSCOPY 360606 > Other Materials-- Physical Properties-- (1992-)
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Zusammenfassung:We present the first investigation of the ultrafast dynamics of the coherent emission from Fano resonances in semiconductors. Time-resolved femtosecond four-wave mixing (FWM) in GaAs under high magnetic field shows that dephasing is dominated by the coupling between discrete states and continua responsible for the Fano interference. In striking contrast to atomic systems and Lorentzian excitations in semiconductors, the decay of the time-integrated FWM signal is not related to dephasing. This decay is due to quantum interference originating from the interplay between semiconductor many-body effects and Fano interference.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.74.470