High-power continuous wave 690 nm AlGaInP laser-diode arrays

High-power continuous wave 690 nm AlGaInP laser-diode arrays

High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor ≊0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm2 per emitting apertur...

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Veröffentlicht in:Applied physics letters 1995-03, Vol.66 (10), p.1163-1165
Hauptverfasser: Skidmore, J. A., Emanuel, M. A., Beach, R. J., Benett, W. J., Freitas, B. L., Carlson, N. W., Solarz, R. W.
Format: Artikel
Sprache:eng
Schlagworte:
426002 - Engineering- Lasers & Masers- (1990-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
DESIGN
ENGINEERING
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
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Beschreibung
Zusammenfassung:High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor ≊0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm2 per emitting aperture is achieved under continuous wave operation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113844