X-band power AlGaAs/InGaAs P-n-p HBT's

X-band power AlGaAs/InGaAs P-n-p HBT's

AlGaAs/InGaAs P-n-p HBT's have been fabricated using carbon-doped material grown by nonarsine MOVPE. F(max) of 39 GHz and ft of 18 GHz were obtained. Operated in common-base mode, a P-n-p HBT achieved 0.5-W output power with 8-dB gain at 10 GHz; saturated output power was 0.69 W. Results are pr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1993-04, Vol.14 (4), p.185-187
Hauptverfasser: HILL, D. G, TAE SEUNG KIM, HUA QUEN TSERNG
Format: Artikel
Sprache:eng
Schlagworte:
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
AMPLIFIERS
Applied sciences
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
Electronics
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTION TRANSISTORS
MICROWAVE EQUIPMENT
NUMERICAL DATA
OPERATION
PHYSICAL PROPERTIES
PNICTIDES
POWER
POWER AMPLIFIERS
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
TRANSISTORS
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:AlGaAs/InGaAs P-n-p HBT's have been fabricated using carbon-doped material grown by nonarsine MOVPE. F(max) of 39 GHz and ft of 18 GHz were obtained. Operated in common-base mode, a P-n-p HBT achieved 0.5-W output power with 8-dB gain at 10 GHz; saturated output power was 0.69 W. Results are presented for devices with emitter length from 120 to 600 microns. (Author (revised))
ISSN:0741-3106
1558-0563
DOI:10.1109/55.215156