Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution X-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric...

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Veröffentlicht in:Applied physics letters 1990-09, Vol.57 (12), p.1242-1244
Hauptverfasser: Tufts, Bruce J., Casagrande, Louis G., Lewis, Nathan S., Grunthaner, Frank J.
Format: Artikel
Sprache:eng
Schlagworte:
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL PROPERTIES
CHEMISTRY
CORRELATIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROCHEMISTRY
ELECTROLYTES
Exact sciences and technology
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
General and physical chemistry
High temperature electrochemistry (including molten salts)
Inorganic And Physical Chemistry
MATERIALS SCIENCE
PHOTOCHEMISTRY
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES 360603 > Materials-- Properties
SCHOTTKY EFFECT
SURFACE PROPERTIES
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Zusammenfassung:Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution X-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103497