Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those...

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Veröffentlicht in:	Applied physics letters 1990-10, Vol.57:16
Hauptverfasser:	Wang, Y.H., Tai, K., Hsieh, Y.F., Chu, S.N.G., Wynn, J.D., Cho, A.Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENTS EFFICIENCY ELECTRIC CURRENTS ENGINEERING EPITAXY FABRICATION GALLIUM ARSENIDES GALLIUM COMPOUNDS LASER CAVITIES LASERS MOLECULAR BEAM EPITAXY PNICTIDES QUANTUM EFFICIENCY SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-) THRESHOLD CURRENT
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Zusammenfassung:	GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al{sub 0.1}Ga{sub 0.9}As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm{sup 2} were measured with an emission efficiency of 0.2 mW/mA.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.104086