Development of Functional Microstructure during Sintering of a ZnO Varistor Material

The effects of sintering time and rate of cooling on the microstructure and current/voltage characteristics of a ZnO varistor material have been investigated. The results provide information about the development of microstructure during sintering and have been interpreted in terms of the role which...

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Veröffentlicht in:	Journal of the American Ceramic Society 1993-01, Vol.76 (1), p.65-71
Hauptverfasser:	Olsson, Eva, Dunlop, Gordon, Österlund, Ragnar
Format:	Artikel
Sprache:	eng
Schlagworte:	360601 - Other Materials- Preparation & Manufacture 360602 - Other Materials- Structure & Phase Studies 360606 - Other Materials- Physical Properties- (1992-) ANTIMONY Applied sciences BISMUTH COMPOUNDS BISMUTH OXIDES Building materials. Ceramics. Glasses Ceramic industries CHALCOGENIDES Chemical industry and chemicals COBALT COOLING CRYSTALS ELECTRIC CONDUCTIVITY ELECTRICAL EQUIPMENT ELECTRICAL PROPERTIES Electrotechnical and electronic ceramics ELEMENTS Exact sciences and technology FABRICATION GRAIN BOUNDARIES MATERIALS SCIENCE METALS MICROSTRUCTURE MINERALS NICKEL OXIDE MINERALS OXIDES OXYGEN COMPOUNDS PHYSICAL PROPERTIES POLYCRYSTALS RESISTORS SEMICONDUCTOR DEVICES SEMICONDUCTOR RESISTORS SINTERING SPINELS Technical ceramics TIME DEPENDENCE TRANSITION ELEMENTS ZINC COMPOUNDS ZINC OXIDES
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Zusammenfassung:	The effects of sintering time and rate of cooling on the microstructure and current/voltage characteristics of a ZnO varistor material have been investigated. The results provide information about the development of microstructure during sintering and have been interpreted in terms of the role which microstructure plays in the determination of electrical properties. A continuous network of intergranular Bi2O3, which lies mainly along the triple junctions between ZnO grains, can give a substantial contribution to the leakage current. The conductivity of this skeleton depends upon its internal microstructure.
ISSN:	0002-7820 1551-2916
DOI:	10.1111/j.1151-2916.1993.tb03690.x