Microstructure and electrical characteristics of sputtered indium Tin oxide films

Oxygen pressure influences surface roughness and domain size. Larger domains and lower roughness provide lowest resistivities.

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Electrochemical Society 1993-06, Vol.140 (6), p.1773-1775
Hauptverfasser:	HIGUCHI, M, SAWADA, M, KURONUMA, Y
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 - Other Materials- Structure & Phase Studies 360606 - Other Materials- Physical Properties- (1992-) CHALCOGENIDES COHERENT SCATTERING Condensed matter: electronic structure, electrical, magnetic, and optical properties CORRELATIONS DATA DIFFRACTION DOMAIN STRUCTURE ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures ELEMENTS Exact sciences and technology EXPERIMENTAL DATA INDIUM COMPOUNDS INDIUM OXIDES INFORMATION MATERIALS SCIENCE MICROSTRUCTURE NONMETALS NUMERICAL DATA OXIDES OXYGEN OXYGEN COMPOUNDS PARTIAL PRESSURE PHYSICAL PROPERTIES Physics ROUGHNESS SCATTERING SPUTTERING SURFACE PROPERTIES TIN COMPOUNDS TIN OXIDES X-RAY DIFFRACTION
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Oxygen pressure influences surface roughness and domain size. Larger domains and lower roughness provide lowest resistivities.
ISSN:	0013-4651 1945-7111
DOI:	10.1149/1.2221640