Can electrical deactivation of highly Si-doped GaAs be explained by autocompensation ?

Using near-edge x-ray absorption fine structure, the first experimental determination of Si atom concentrations occupying As sites in Si-doped GaAs (100) is reported. The measurements reveal that at high doping levels (≳1019 cm−3) in molecular-beam-epitaxy-grown samples, the number of such p-type Si...

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Veröffentlicht in:	Applied physics letters 1993-10, Vol.63 (17), p.2357-2359
Hauptverfasser:	SCHUPPLER, S, ADLER, D. L, PFEIFFER, L. N, WEST, K. W, CHABAN, E. E, CITRIN, P. H
Format:	Artikel
Sprache:	eng
Schlagworte:	665100 > Nuclear Techniques in Condensed Matter Physics > (1992-) ABSORPTION SPECTRA ACTIVATION ANALYSIS ALLOYS ARSENIC COMPOUNDS ARSENIDES BREMSSTRAHLUNG CARRIER DENSITY Charge carriers: generation, recombination, lifetime, and trapping CHEMICAL ANALYSIS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Conductivity phenomena in semiconductors and insulators CRYSTAL DOPING Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors ELECTROMAGNETIC RADIATION Electron states Electronic transport in condensed matter EPITAXY Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS Iii-v semiconductors Impurity and defect levels MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PASSIVATION Physics PNICTIDES RADIATIONS SILICON ADDITIONS SILICON ALLOYS SPECTRA SPECTROSCOPY 360606 > Other Materials-- Physical Properties-- (1992-) Structure of solids and liquids crystallography SYNCHROTRON RADIATION X-RAY SPECTROSCOPY
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Zusammenfassung:	Using near-edge x-ray absorption fine structure, the first experimental determination of Si atom concentrations occupying As sites in Si-doped GaAs (100) is reported. The measurements reveal that at high doping levels (≳1019 cm−3) in molecular-beam-epitaxy-grown samples, the number of such p-type Si atoms is insufficient to account for the observed large reduction of free-carriers.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.110500