Growth and photoluminescence study of low concentration InP layers grown by liquid-phase epitaxy in the presence of erbium

InP layers with electron concentrations as low as 7 [times] 10[sup 13] cm[sup [minus]3] were grown by liquid-phase epitaxy using rare-earth erbium as the donor-gettering source. The presence of Er during growth causes a decrease in electron concentration and the strong suppression of donor-related l...

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Veröffentlicht in:Journal of the Electrochemical Society 1993-10, Vol.140 (10), p.3030-3033
Hauptverfasser: Wu, Meng‐Chyi, Chiu, Cheng‐Ming, Tu, Yuan‐Kuang
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Sprache:eng
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Zusammenfassung:InP layers with electron concentrations as low as 7 [times] 10[sup 13] cm[sup [minus]3] were grown by liquid-phase epitaxy using rare-earth erbium as the donor-gettering source. The presence of Er during growth causes a decrease in electron concentration and the strong suppression of donor-related luminescence transitions due to the effective removal of residual donors in the growth solution. The exciton-related lines of the low concentration InP layers are observed by using Er as the gettering source.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2220952