Growth and photoluminescence study of low concentration InP layers grown by liquid-phase epitaxy in the presence of erbium
InP layers with electron concentrations as low as 7 [times] 10[sup 13] cm[sup [minus]3] were grown by liquid-phase epitaxy using rare-earth erbium as the donor-gettering source. The presence of Er during growth causes a decrease in electron concentration and the strong suppression of donor-related l...
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Veröffentlicht in: | Journal of the Electrochemical Society 1993-10, Vol.140 (10), p.3030-3033 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | InP layers with electron concentrations as low as 7 [times] 10[sup 13] cm[sup [minus]3] were grown by liquid-phase epitaxy using rare-earth erbium as the donor-gettering source. The presence of Er during growth causes a decrease in electron concentration and the strong suppression of donor-related luminescence transitions due to the effective removal of residual donors in the growth solution. The exciton-related lines of the low concentration InP layers are observed by using Er as the gettering source. |
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ISSN: | 0013-4651 1945-7111 |
DOI: | 10.1149/1.2220952 |