An improved displacement damage monitor

A frequency-domain technique for measuring carrier lifetime in GaAs light- emitting-diode (LED) displacement damage monitors capable of high sensitivity and repeatability is developed. Applications of this technique that take advantage of the high sensitivity of this method, including the measuremen...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) 1990-12, Vol.37, p.1726-1731
Hauptverfasser:	Barry, A L, MAXSEINER, R, Wojcik, R, Briere, M A, Braeunig, D
Format:	Artikel
Sprache:	eng
Schlagworte:	440101 - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments ARSENIC ARSENIC COMPOUNDS ARSENIDES CRYSTAL DEFECTS CRYSTAL STRUCTURE DIFFUSION ELECTRONS ELEMENTARY PARTICLES ELEMENTS ENERGY ENERGY RANGE FABRICATION FERMIONS GALLIUM ARSENIDES GALLIUM COMPOUNDS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY KEV RANGE KEV RANGE 100-1000 LEPTONS LIFETIME LIGHT EMITTING DIODES MEASURING INSTRUMENTS MONITORS PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES SEMIMETALS SENSITIVITY THRESHOLD ENERGY USES
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A frequency-domain technique for measuring carrier lifetime in GaAs light- emitting-diode (LED) displacement damage monitors capable of high sensitivity and repeatability is developed. Applications of this technique that take advantage of the high sensitivity of this method, including the measurement of the threshold energy for lattice displacement in GaAs, are described. The measured minimum electron energy for displacement damage was 270 +/- 15 keV, corresponding to a threshold atomic displacement energy of 10.0 +/- 0.7 eV, assuming the defect is a displaced arsenic atom. (I.E.)
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.101183