Metastable SiGeC formation by solid phase epitaxy
We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Tr...
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| Veröffentlicht in: | Applied physics letters 1993-11, Vol.63 (20), p.2786-2788 |
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| container_end_page | 2788 |
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| container_issue | 20 |
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| container_title | Applied physics letters |
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| creator | STRANE, J. W STEIN, H. J LEE, S. R DOYLE, B. L PICRAUX, S. T MAYER, J. W |
| description | We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Transmission electron microscopy and Rutherford backscattering spectrometry show heteroepitaxial regrowth of Si1−x−yGexCy layers into the metastable diamond cubic phase. Fourier transform infrared spectroscopy verifies that the carbon occupies substitutional lattice sites. Double crystal x-ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C-induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard’s law. |
| doi_str_mv | 10.1063/1.110334 |
| format | Article |
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Double crystal x-ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C-induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard’s law.</description><subject>360602 -- Other Materials-- Structure & Phase Studies</subject><subject>ALLOY SYSTEMS</subject><subject>ANNEALING</subject><subject>CARBIDES</subject><subject>CARBON COMPOUNDS</subject><subject>COHERENT SCATTERING</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>DIFFRACTION</subject><subject>ELASTIC SCATTERING</subject><subject>ELECTRON MICROSCOPY</subject><subject>ENERGY LEVELS</subject><subject>EPITAXY</subject><subject>Exact sciences and technology</subject><subject>EXCITED STATES</subject><subject>GERMANIUM CARBIDES</subject><subject>GERMANIUM COMPOUNDS</subject><subject>HEAT TREATMENTS</subject><subject>ION IMPLANTATION</subject><subject>MATERIALS SCIENCE</subject><subject>METASTABLE STATES</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>MICROSCOPY</subject><subject>Physics</subject><subject>RUTHERFORD SCATTERING</subject><subject>SCATTERING</subject><subject>SILICON CARBIDES</subject><subject>SILICON COMPOUNDS 360601 -- Other Materials-- Preparation & Manufacture</subject><subject>Solid phase epitaxy; growth from solid phases</subject><subject>STRAINS</subject><subject>TERNARY ALLOY SYSTEMS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo90MFKxDAQgOEgCtZV8BGKePDSNekkTXKUoquw4kE9h2mSspFuW5oc7NtbqcgchoGPOfyEXDO6ZbSCe7ZljALwE5IxKmUBjKlTklFKoai0YOfkIsav5RQlQEbYq08YEzadz9_Dztd5O0xHTGHo82bO49AFl48HjD73Y0j4PV-Ssxa76K_-9oZ8Pj1-1M_F_m33Uj_sCwtcp0I6QRXI0oGjrVZUlkKVXLqq4RKcLrWgy1RWciccKqQV120jvVaco2cIG3Kz_h1iCibakLw92KHvvU1GyJILqRZ0tyI7DTFOvjXjFI44zYZR89vDMLP2WOjtSkeMFrt2wt6G-O9BcaWXJj-RGFvE</recordid><startdate>19931115</startdate><enddate>19931115</enddate><creator>STRANE, J. 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W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-7d508372d3d0f9807258247d6b473d929505056c74d5da8a0649fb7e9844ae1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>360602 -- Other Materials-- Structure & Phase Studies</topic><topic>ALLOY SYSTEMS</topic><topic>ANNEALING</topic><topic>CARBIDES</topic><topic>CARBON COMPOUNDS</topic><topic>COHERENT SCATTERING</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>DIFFRACTION</topic><topic>ELASTIC SCATTERING</topic><topic>ELECTRON MICROSCOPY</topic><topic>ENERGY LEVELS</topic><topic>EPITAXY</topic><topic>Exact sciences and technology</topic><topic>EXCITED STATES</topic><topic>GERMANIUM CARBIDES</topic><topic>GERMANIUM COMPOUNDS</topic><topic>HEAT TREATMENTS</topic><topic>ION IMPLANTATION</topic><topic>MATERIALS SCIENCE</topic><topic>METASTABLE STATES</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>MICROSCOPY</topic><topic>Physics</topic><topic>RUTHERFORD SCATTERING</topic><topic>SCATTERING</topic><topic>SILICON CARBIDES</topic><topic>SILICON COMPOUNDS 360601 -- Other Materials-- Preparation & Manufacture</topic><topic>Solid phase epitaxy; growth from solid phases</topic><topic>STRAINS</topic><topic>TERNARY ALLOY SYSTEMS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>STRANE, J. W</creatorcontrib><creatorcontrib>STEIN, H. J</creatorcontrib><creatorcontrib>LEE, S. R</creatorcontrib><creatorcontrib>DOYLE, B. L</creatorcontrib><creatorcontrib>PICRAUX, S. T</creatorcontrib><creatorcontrib>MAYER, J. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>STRANE, J. W</au><au>STEIN, H. J</au><au>LEE, S. R</au><au>DOYLE, B. L</au><au>PICRAUX, S. T</au><au>MAYER, J. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Metastable SiGeC formation by solid phase epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1993-11-15</date><risdate>1993</risdate><volume>63</volume><issue>20</issue><spage>2786</spage><epage>2788</epage><pages>2786-2788</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Transmission electron microscopy and Rutherford backscattering spectrometry show heteroepitaxial regrowth of Si1−x−yGexCy layers into the metastable diamond cubic phase. Fourier transform infrared spectroscopy verifies that the carbon occupies substitutional lattice sites. Double crystal x-ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C-induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard’s law.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.110334</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1993-11, Vol.63 (20), p.2786-2788 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_5724578 |
| source | AIP Digital Archive |
| subjects | 360602 -- Other Materials-- Structure & Phase Studies ALLOY SYSTEMS ANNEALING CARBIDES CARBON COMPOUNDS COHERENT SCATTERING Cross-disciplinary physics: materials science rheology DIFFRACTION ELASTIC SCATTERING ELECTRON MICROSCOPY ENERGY LEVELS EPITAXY Exact sciences and technology EXCITED STATES GERMANIUM CARBIDES GERMANIUM COMPOUNDS HEAT TREATMENTS ION IMPLANTATION MATERIALS SCIENCE METASTABLE STATES Methods of deposition of films and coatings film growth and epitaxy MICROSCOPY Physics RUTHERFORD SCATTERING SCATTERING SILICON CARBIDES SILICON COMPOUNDS 360601 -- Other Materials-- Preparation & Manufacture Solid phase epitaxy growth from solid phases STRAINS TERNARY ALLOY SYSTEMS TRANSMISSION ELECTRON MICROSCOPY X-RAY DIFFRACTION |
| title | Metastable SiGeC formation by solid phase epitaxy |
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