Metastable SiGeC formation by solid phase epitaxy

We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Tr...

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Veröffentlicht in:	Applied physics letters 1993-11, Vol.63 (20), p.2786-2788
Hauptverfasser:	STRANE, J. W, STEIN, H. J, LEE, S. R, DOYLE, B. L, PICRAUX, S. T, MAYER, J. W
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 > Other Materials-- Structure & Phase Studies ALLOY SYSTEMS ANNEALING CARBIDES CARBON COMPOUNDS COHERENT SCATTERING Cross-disciplinary physics: materials science rheology DIFFRACTION ELASTIC SCATTERING ELECTRON MICROSCOPY ENERGY LEVELS EPITAXY Exact sciences and technology EXCITED STATES GERMANIUM CARBIDES GERMANIUM COMPOUNDS HEAT TREATMENTS ION IMPLANTATION MATERIALS SCIENCE METASTABLE STATES Methods of deposition of films and coatings film growth and epitaxy MICROSCOPY Physics RUTHERFORD SCATTERING SCATTERING SILICON CARBIDES SILICON COMPOUNDS 360601 > Other Materials-- Preparation & Manufacture Solid phase epitaxy growth from solid phases STRAINS TERNARY ALLOY SYSTEMS TRANSMISSION ELECTRON MICROSCOPY X-RAY DIFFRACTION
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Zusammenfassung:	We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Transmission electron microscopy and Rutherford backscattering spectrometry show heteroepitaxial regrowth of Si1−x−yGexCy layers into the metastable diamond cubic phase. Fourier transform infrared spectroscopy verifies that the carbon occupies substitutional lattice sites. Double crystal x-ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C-induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard’s law.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.110334