Extended photoemission fine structure analysis of the Si(111)-(7 x 7) surface core levels

The surface- and bulk-derived components of the Si 2[ital p] core levels, acquired by photoemission from Si(111)-(7[times]7), show strong and different oscillations caused by extended fine structure above the 2[ital p] edge. An analysis of these oscillations yields the bulk and surface bond lengths...

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Veröffentlicht in:	Physical review letters 1993-11, Vol.71 (18), p.2955-2958
Hauptverfasser:	Carlisle, JA, Sieger, MT, Miller, T, Chiang, T
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 - Other Materials- Structure & Phase Studies 360606 - Other Materials- Physical Properties- (1992-) 665100 - Nuclear Techniques in Condensed Matter Physics - (1992-) BINDING ENERGY BOND LENGTHS BREMSSTRAHLUNG CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DIMENSIONS ELECTROMAGNETIC RADIATION ELECTRON SPECTROSCOPY ELEMENTS EMISSION ENERGY FINE STRUCTURE LENGTH MATERIALS SCIENCE OSCILLATIONS PHOTOELECTRON SPECTROSCOPY PHOTOEMISSION RADIATIONS SECONDARY EMISSION SEMIMETALS SILICON SPECTRAL RESPONSE SPECTROSCOPY SURFACE PROPERTIES SYNCHROTRON RADIATION
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Beschreibung
Zusammenfassung:	The surface- and bulk-derived components of the Si 2[ital p] core levels, acquired by photoemission from Si(111)-(7[times]7), show strong and different oscillations caused by extended fine structure above the 2[ital p] edge. An analysis of these oscillations yields the bulk and surface bond lengths which agree well with the known structure. The heretofore controversial issues of the photoemission escape depth and the atomic origin of the surface core levels are resolved.
ISSN:	0031-9007 1079-7114
DOI:	10.1103/physrevlett.71.2955