Conductivity-type inversion following low-energy hydrogen implantation

A surface conductivity-type inversion has been observed following low-energy (400 eV), high-dose, hydrogen implantation of p-type silicon. Detailed structural, chemical, and electrical examination of the surface revealed that the inversion resulted from hydrogen forming n-type complexes with extende...

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Veröffentlicht in:	Applied physics letters 1991-05, Vol.58 (18), p.1985-1987
Hauptverfasser:	TIAN-QUN ZHOU, RADZIMSKI, Z, PATNAIK, B, ROZGONYI, G. A, SOPORI, B
Format:	Artikel
Sprache:	eng
Schlagworte:	140501 > Solar Energy Conversion-- Photovoltaic Conversion CHEMICAL REACTIONS Condensed matter: electronic structure, electrical, magnetic, and optical properties DIRECT ENERGY CONVERTERS ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ELEMENTS Exact sciences and technology HYDROGENATION ION IMPLANTATION MATERIALS SCIENCE PHOTOELECTRIC CELLS PHOTOELECTROMAGNETIC EFFECTS PHOTOVOLTAIC CELLS PHOTOVOLTAIC EFFECT PHYSICAL PROPERTIES Physics SEMIMETALS SILICON SILICON SOLAR CELLS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT 360603 > Materials-- Properties Surface conductivity and carrier phenomena SURFACE PROPERTIES
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Zusammenfassung:	A surface conductivity-type inversion has been observed following low-energy (400 eV), high-dose, hydrogen implantation of p-type silicon. Detailed structural, chemical, and electrical examination of the surface revealed that the inversion resulted from hydrogen forming n-type complexes with extended defects.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.105040