Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling

Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature o...

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Veröffentlicht in:	Applied physics letters 1991-03, Vol.58 (12), p.1305-1307
Hauptverfasser:	Chan, K. T., Kirschbaum, C. L., Yu, K. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	426000 - Engineering- Components, Electron Devices & Circuits- (1990-) 440800 - Miscellaneous Instrumentation- (1990-) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CHANNELING DESIGN ENGINEERING FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS ION CHANNELING LAWRENCE BERKELEY LABORATORY LUMINESCENCE MASS SPECTROSCOPY NATIONAL ORGANIZATIONS OTHER INSTRUMENTATION PHOTOLUMINESCENCE PNICTIDES SEMICONDUCTOR DEVICES SPECTROSCOPY TRANSISTORS US AEC US DOE US ERDA US ORGANIZATIONS
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