Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling

Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature o...

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Veröffentlicht in:Applied physics letters 1991-03, Vol.58 (12), p.1305-1307
Hauptverfasser: Chan, K. T., Kirschbaum, C. L., Yu, K. M.
Format: Artikel
Sprache:eng
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Zusammenfassung:Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature of 510 °C. The segregation effect was found to be suppressed when the As4 overpressure was doubled. Ion channeling measurements are capable of differentiating the coherency of the strained InGaAs layer in the samples studied. A correlation was found between the coherency of the layer and its electrical transport property.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104344