High-speed and low-relative-intensity noise 1. 3. mu. m InGaAsP semi-insulating buried crescent lasers

This paper reports on the dependence of static and dynamic performance on active layer doping concentration in 1.3 {mu}m InGaAsP semi-insulating buried crescent (SIBC) Fabry-Perot lasers that has been investigated experimentally. The optical loss in the active region is one of the dominant mechanisms in determining the threshold current for doped active layer lasers. These SIBC lasers have a 3 dB modulation bandwidth of 19 GHz for pulsed operation and 16 GHz for CW operation, and have a relative intensity noise below {minus}150 dB/Hz for biased current at 120 mA. This modulation bandwidth is the highest yet reported for InGaAsP lasers with semi-insulating current-blocking layers. The doped active lasers show an initial small degradation rate at 65{degrees}C operation, which gives an acceptable long operation lifetime.