Tantalum oxide thin films for dielectric applications by low-pressure chemical vapor deposition

Good-quality Ta sub 2 O sub 5 LPCVD films were deposited from O sub 2 and tantalum pentaethoxide onto Si. Effective dielectric constants decrease with decreasing thickness and leakage currents are independent of film thickness (10-40 nm) because of the presence of a 2-nm SiO sub 2 layer on the Si. W...

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