Tantalum oxide thin films for dielectric applications by low-pressure chemical vapor deposition

Good-quality Ta sub 2 O sub 5 LPCVD films were deposited from O sub 2 and tantalum pentaethoxide onto Si. Effective dielectric constants decrease with decreasing thickness and leakage currents are independent of film thickness (10-40 nm) because of the presence of a 2-nm SiO sub 2 layer on the Si. W...

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Veröffentlicht in:	Journal of the Electrochemical Society 1993-09, Vol.140 (9), p.2615-2621
Hauptverfasser:	Hitchens, W R, Krusell, W C, Dobkin, D M
Format:	Artikel
Sprache:	eng
Schlagworte:	360601 - Other Materials- Preparation & Manufacture 360606 - Other Materials- Physical Properties- (1992-) CHALCOGENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION CRYSTALS CURRENTS DATA DEPOSITION DIELECTRIC PROPERTIES ELECTRIC CURRENTS ELECTRICAL PROPERTIES ELEMENTS EXPERIMENTAL DATA INFORMATION LEAKAGE CURRENT MATERIALS SCIENCE NUMERICAL DATA OXIDES OXYGEN COMPOUNDS PHYSICAL PROPERTIES POLYCRYSTALS REFRACTORY METAL COMPOUNDS SEMIMETALS SILICON SILICON COMPOUNDS SILICON OXIDES SUBSTRATES SURFACE COATING TANTALUM COMPOUNDS TANTALUM OXIDES TRANSITION ELEMENT COMPOUNDS
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Beschreibung
Zusammenfassung:	Good-quality Ta sub 2 O sub 5 LPCVD films were deposited from O sub 2 and tantalum pentaethoxide onto Si. Effective dielectric constants decrease with decreasing thickness and leakage currents are independent of film thickness (10-40 nm) because of the presence of a 2-nm SiO sub 2 layer on the Si. While these annealed Ta sub 2 O sub 5 films may be satisfactory for 64-Mb DRAMs, 256 Mb DRAMs are precluded by this process.
ISSN:	0013-4651 1945-7111
DOI:	10.1149/1.2220872