Co, Fe, and Ti implants in InGaAs and Co implants in InP at 200°C

Elevated temperature (200[degrees]C) single- and multiple-energy Co implants in n-type InP, Co and Fe implants in n-type In[sub 0.53]Ga[sub 0.47]As, and Ti implants in p-type In[sub 0.53]Ga[sub 0.47]As were performed. For elevated temperature, single-energy Co and Fe implants, no satellite peaks at various locations like 0.8 R[sub P], R[sub P] + [Delta]R[sub P], and 2R[sub P] (R[sub P] is the projected range and [Delta]R[sub P] the straggle of the implant) are observed, in contrast to the case of room temperature implants. However, the outdiffusion of the implant is as severe as that in room temperature implantation for high temperature anneals. Indiffusion of the implant also occurs, but it is not as severe as the outdiffusion. High temperature annealing of Ti-implanted material results in a slight indiffusion of Ti, with minimal redistribution or outdiffusion. For all elevated temperature implants, the lattice quality of the annealed material is close to that of the virgin unimplanted material. For all ion species used in this study, resistivities close to the intrinsic limit are obtained in the implanted and annealed materials. 25 refs., 9 figs., 1 tab.