Extreme g-factor anisotropy induced by strain

Magnetotransport measurements as a function of {ital B}-field orientation are studied on {ital p}-type strained-layer (001) GaAs/In{sub 0.20}Ga{sub 0.80}As/GaAs quantum wells at temperatures from 4.2 to 0.4 K. It is shown that the two-dimensional holes are derived from the {ital m}{sub {ital j}}={pl...

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Veröffentlicht in:	Physical review. B, Condensed matter Condensed matter, 1991-05, Vol.43 (14), p.12110-12113
Hauptverfasser:	LIN, S. Y, WEI, H. P, TSUI, D. C, KLEM, J. F, ALLEN, S. J
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties ANISOTROPY ARSENIC COMPOUNDS ARSENIDES Condensed matter: electronic structure, electrical, magnetic, and optical properties CYCLOTRON RESONANCE Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS HOLES INDIUM ARSENIDES INDIUM COMPOUNDS LANDE FACTOR MATERIALS SCIENCE Physics PNICTIDES RESONANCE SHUBNIKOV-DE HAAS EFFECT STRAINS Surface and interface electron states ULTRALOW TEMPERATURE ZEEMAN EFFECT
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