Extreme g-factor anisotropy induced by strain

Magnetotransport measurements as a function of {ital B}-field orientation are studied on {ital p}-type strained-layer (001) GaAs/In{sub 0.20}Ga{sub 0.80}As/GaAs quantum wells at temperatures from 4.2 to 0.4 K. It is shown that the two-dimensional holes are derived from the {ital m}{sub {ital j}}={plus minus}3/2 subbands and that the Zeeman splitting between the {ital m}{sub {ital j}}=3/2 and {ital m}{sub {ital j}}={minus}3/2 states of the same Landau level depends on the components of {ital B} perpendicular to the strained layer and not the total {ital B}. This {ital g}-factor anisotropy is shown to be a consequence of the large uniaxial strain in the In{sub 0.20}Ga{sub 0.80}As layer.