Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers

The performance of a series of InxGa1−xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000 nm is discussed. Less-strained devices, with x=0.20 and QW thickness 7 nm (λ∼930 nm), perform comparably with GaAs QW lasers. Longer wavelengt...

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Veröffentlicht in:	Applied physics letters 1989-10, Vol.55 (15), p.1501-1503
Hauptverfasser:	BOUR, D. P, MARTINELLI, R. U, GILBERT, D. B, ELBAUM, L, HARVEY, M. G
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES AUGER EFFECT CHEMICAL COATING CHEMICAL VAPOR DEPOSITION COATINGS CURRENT DENSITY CURRENTS DATA DEPOSITION ELECTRIC CURRENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INDIUM ARSENIDES INDIUM COMPOUNDS INFORMATION JUNCTIONS LASERS NUMERICAL DATA OPERATION Optics Physics PNICTIDES RECOMBINATION SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SOLID STATE LASERS SURFACE COATING 420300 > Engineering-- Lasers-- (-1989) THRESHOLD CURRENT VAPOR DEPOSITED COATINGS
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Zusammenfassung:	The performance of a series of InxGa1−xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000 nm is discussed. Less-strained devices, with x=0.20 and QW thickness 7 nm (λ∼930 nm), perform comparably with GaAs QW lasers. Longer wavelength (λ>950 nm), more highly strained lasers exhibit poorer performance. Our results suggest that interfacial recombination limits the performance at the longer wavelength structures.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.101590