Thermally and ion-induced phase formation in a Pd/Ge bilayer

Thermally and ion-induced phase formation in a Pd/Ge bilayer

Pd/Ge bilayer samples with three different overall compositions centered around Pd2Ge have been thermally annealed or irradiated with 300 keV Kr ions at room temperature. We observed that the first phase formed with ion irradiation, as in thermal annealing is Pd2Ge. In the Pd75Ge25 sample, the forma...

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Veröffentlicht in:Journal of applied physics 1989-10, Vol.66 (8), p.3600-3603
Hauptverfasser: Li, Jian, Hong, Q. Z., Mayer, J. W.
Format: Artikel
Sprache:eng
Schlagworte:
360104 - Metals & Alloys- Physical Properties
AMORPHOUS STATE
ANNEALING
CHARGED PARTICLES
COLLISIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY RANGE
GERMANIUM
HEAT TREATMENTS
ION COLLISIONS
IONS
KEV RANGE
KEV RANGE 100-1000
KRYPTON IONS
LAYERS
MATERIALS SCIENCE
MEDIUM TEMPERATURE
METALS
PALLADIUM
PHASE STUDIES
PHYSICAL PROPERTIES
PLATINUM METALS
TRANSITION ELEMENTS
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Zusammenfassung:Pd/Ge bilayer samples with three different overall compositions centered around Pd2Ge have been thermally annealed or irradiated with 300 keV Kr ions at room temperature. We observed that the first phase formed with ion irradiation, as in thermal annealing is Pd2Ge. In the Pd75Ge25 sample, the formation of an amorphous phase as well as the Pd2Ge phase has been observed after 3×1015 Kr+/cm2 irradiation. Successive irradiations up to the 5×1015 Kr+/cm2 led to the demixing of this amorphous phase to Pd2Ge and Pd.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.344066