Fully symmetric cooled CMOS on (110) plane

A new cooled CMOS device using dual-polysilicon gates, (110) Si substrates, lightly doped drains with doping concentrations of 10 super(14) cm super(-2), and no channel implant is described. It is found that the peak mobility of a p super(+) polysilicon gate pMOS transistor on a (110) plane is 1.6 t...

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Veröffentlicht in:	IEEE transactions on electron devices 1989-08, Vol.36 (8), p.1429-1433
Hauptverfasser:	AOKI, M, YANO, K, MASUHARA, T, SHIMOHIGASHI, K
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) Applied sciences COOLING CRYSTAL DOPING DESIGN ELECTRONIC EQUIPMENT Electronics ELEMENTS ENGINEERING Exact sciences and technology MATERIALS MATERIALS SCIENCE MOS TRANSISTORS N-TYPE CONDUCTORS OSCILLATORS P-TYPE CONDUCTORS SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTOR MATERIALS SEMIMETALS SILICON SUBSTRATES SYMMETRY TRANSISTORS
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