Anomalous behavior of ion-implanted GaSb

Anomalous elevations up to 6 μm of the ion-implanted GaSb surface were observed. This swelling phenomenon is related to the formation of a porous layer and is dependent on the mass, energy, and dose of the implanted ions. A strong amount of oxygen was measured in the porous layers but this oxygen is...

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Veröffentlicht in:	Applied physics letters 1991-10, Vol.59 (15), p.1872-1874
Hauptverfasser:	CALLEC, R, FAVENNEC, P. N, SALVI, M, L'HARIDON, H, GAUNEAU, M
Format:	Artikel
Sprache:	eng
Schlagworte:	ANTIMONIDES ANTIMONY COMPOUNDS Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology GALLIUM ANTIMONIDES GALLIUM COMPOUNDS ION IMPLANTATION MATERIALS SCIENCE PHYSICAL RADIATION EFFECTS Physics PNICTIDES POROSITY RADIATION EFFECTS 360605 > Materials-- Radiation Effects Structure of solids and liquids crystallography SWELLING
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Zusammenfassung:	Anomalous elevations up to 6 μm of the ion-implanted GaSb surface were observed. This swelling phenomenon is related to the formation of a porous layer and is dependent on the mass, energy, and dose of the implanted ions. A strong amount of oxygen was measured in the porous layers but this oxygen is likely not responsible for the swelling. The behavior of implanted GaSb is very similar to that of InSb previously described.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106173