Chemical vapor deposition of copper and copper oxide thin films from copper(I) tert-butoxide

Work is described to produce a chemical vapor deposition < CVD > of Cu and/or copper oxide from a non-halide precursor. Heating of (Cu(O-t-Bu)) in vacuum produced deposits of Cu on several substrates. The Cu contained approx 5% oxygen and < 1% carbon, with some evidence of the presence of tert-butyl alcohol. It is demonstrated that metallic films can be produced from molecular alkoxide precursors. This represents the first CVD of pure copper (I) oxide. Additional work will be done with carrier gases to reduce the impurity level and investigate their use in copper oxide based superconductors. Photomicrographs. 19 ref.--J.C.J.