Ion-irradiation control of photoluminescence from porous silicon

Ion irradiation was used to pattern a region of red-light emitting porous silicon by eliminating visible-light photoluminescence (PL). The PL peak wavelength is approximately 735 nm and shows little dependence on the excitation-light wavelength. The ratio of PL intensities for different excitation w...

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Veröffentlicht in:	Applied physics letters 1991-10, Vol.59 (17), p.2088-2090
Hauptverfasser:	BARBOUR, J. C, DIMOS, D, GUILINGER, T. R, KELLY, M. J, TSAO, S. S
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties 360605 - Materials- Radiation Effects BEAMS Condensed matter: electronic structure, electrical, magnetic, and optical properties ELECTROMAGNETIC RADIATION ELEMENTS Exact sciences and technology FREQUENCY DEPENDENCE ION BEAMS LUMINESCENCE MATERIALS MATERIALS SCIENCE Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation PHOTOLUMINESCENCE PHYSICAL RADIATION EFFECTS Physics POROUS MATERIALS RADIATION EFFECTS RADIATIONS SEMIMETALS SILICON VISIBLE RADIATION
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Beschreibung
Zusammenfassung:	Ion irradiation was used to pattern a region of red-light emitting porous silicon by eliminating visible-light photoluminescence (PL). The PL peak wavelength is approximately 735 nm and shows little dependence on the excitation-light wavelength. The ratio of PL intensities for different excitation wavelengths was shown to be proportional to the ratio of the absorption coefficients. Below saturation, the integrated PL intensity increased linearly with excitation-light power density.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106141