Electrical Properties of Ceria-Doped Yttria

Electrical Properties of Ceria-Doped Yttria

The electrical conductivity and ionic domain of several ceriadoped yttria compositions, with up to 10 cation% dopant, were studied as a function of temperature (800° to 1100°C) and oxygen partial pressure (10−15 to 105 Pa). The ionic conduction in ceria‐doped yttria involves the transport of interst...

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Veröffentlicht in:Journal of the American Ceramic Society 1991-03, Vol.74 (3), p.598-605
Hauptverfasser: Marques, Fernando M. B., Wirtz, Gerald P.
Format: Artikel
Sprache:eng
Schlagworte:
360204 - Ceramics, Cermets, & Refractories- Physical Properties
ceria
CHARGED PARTICLES
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
doping
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
Electronic transport in condensed matter
Exact sciences and technology
INTERSTITIALS
IONS
MATERIALS
MATERIALS SCIENCE
OXYGEN IONS
PHYSICAL PROPERTIES
Physics
POINT DEFECTS
POLARONS
PRESSURE DEPENDENCE
QUASI PARTICLES
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS
VALENCE
yttria
YTTRIUM COMPOUNDS
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Beschreibung
Zusammenfassung:The electrical conductivity and ionic domain of several ceriadoped yttria compositions, with up to 10 cation% dopant, were studied as a function of temperature (800° to 1100°C) and oxygen partial pressure (10−15 to 105 Pa). The ionic conduction in ceria‐doped yttria involves the transport of interstitial oxygen ion defects. The increase of electronic conductivity under reducing conditions with increasing dopant concentration suggests hopping of small polarons between cerium ions with different valences as the dominant conduction mechanism.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1991.tb04066.x