Hydrogen introduction and hydrogen-enhanced thermal donor formation in silicon

Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 °C. Most of the hydrogen is trapped near the surface where it forms Si—H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile duri...

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Veröffentlicht in:Journal of applied physics 1994-04, Vol.75 (7), p.3477-3484
Hauptverfasser: Stein, H. J., Hahn, SooKap
Format: Artikel
Sprache:eng
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Zusammenfassung:Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 °C. Most of the hydrogen is trapped near the surface where it forms Si—H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile during subsequent furnace anneals between 350 and 400 °C. A hydrogen concentration that is only a few percent of the oxygen concentration is sufficient to enhance the TD formation rate, indicative of a hydrogen-catalyzed process. Maximum concentrations for TDs after annealing at 400 °C exceed that for retained hydrogen. A mechanism of hydrogen diffusion through oxygen traps and correlated hydrogen-promoted oxygen diffusion is proposed to explain the enhanced TD formation rates.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.356109