Hydrogen introduction and hydrogen-enhanced thermal donor formation in silicon
Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 °C. Most of the hydrogen is trapped near the surface where it forms Si—H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile duri...
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Veröffentlicht in: | Journal of applied physics 1994-04, Vol.75 (7), p.3477-3484 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 °C. Most of the hydrogen is trapped near the surface where it forms Si—H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile during subsequent furnace anneals between 350 and 400 °C. A hydrogen concentration that is only a few percent of the oxygen concentration is sufficient to enhance the TD formation rate, indicative of a hydrogen-catalyzed process. Maximum concentrations for TDs after annealing at 400 °C exceed that for retained hydrogen. A mechanism of hydrogen diffusion through oxygen traps and correlated hydrogen-promoted oxygen diffusion is proposed to explain the enhanced TD formation rates. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.356109 |