Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology

We have demonstrated a new planarized all-refractory technology for low {ital T}{sub {ital c}} superconductivity (PARTS). With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This appr...

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Veröffentlicht in:	Applied physics letters 1991-11, Vol.59:20
Hauptverfasser:	Ketchen, M.B., Pearson, D., Kleinsasser, A.W., Hu, C., Smyth, M., Logan, J., Stawiasz, K., Baran, E., Jaso, M., Ross, T., Petrillo, K., Manny, M., Basavaiah, S., Brodsky, S., Kaplan, S.B., Gallagher, W.J., Bhushan, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM COMPOUNDS ALUMINIUM OXIDES CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRONIC CIRCUITS ELEMENTS FABRICATION INTEGRATED CIRCUITS JOSEPHSON JUNCTIONS JUNCTIONS METALS MICROELECTRONIC CIRCUITS MIM JUNCTIONS NIOBIUM OXIDES OXYGEN COMPOUNDS SEMICONDUCTOR JUNCTIONS SUPERCONDUCTING JUNCTIONS TECHNOLOGY TRANSFER TECHNOLOGY UTILIZATION TRANSITION ELEMENTS 426001 > Engineering-- Superconducting Devices & Circuits-- (1990-)
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