Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology

We have demonstrated a new planarized all-refractory technology for low {ital T}{sub {ital c}} superconductivity (PARTS). With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5--100 {mu}m{sup 2}. Junction quality is excellent with the figure of merit {ital V}{sub {ital m}} typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.