Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology
We have demonstrated a new planarized all-refractory technology for low {ital T}{sub {ital c}} superconductivity (PARTS). With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This appr...
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| Veröffentlicht in: | Applied physics letters 1991-11, Vol.59:20 |
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| container_title | Applied physics letters |
| container_volume | 59:20 |
| creator | Ketchen, M.B. Pearson, D. Kleinsasser, A.W. Hu, C. Smyth, M. Logan, J. Stawiasz, K. Baran, E. Jaso, M. Ross, T. Petrillo, K. Manny, M. Basavaiah, S. Brodsky, S. Kaplan, S.B. Gallagher, W.J. Bhushan, M. |
| description | We have demonstrated a new planarized all-refractory technology for low {ital T}{sub {ital c}} superconductivity (PARTS). With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5--100 {mu}m{sup 2}. Junction quality is excellent with the figure of merit {ital V}{sub {ital m}} typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators. |
| doi_str_mv | 10.1063/1.106405 |
| format | Article |
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With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5--100 {mu}m{sup 2}. Junction quality is excellent with the figure of merit {ital V}{sub {ital m}} typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.106405</identifier><language>eng</language><publisher>United States</publisher><subject>ALUMINIUM COMPOUNDS ; ALUMINIUM OXIDES ; CHALCOGENIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; ELECTRONIC CIRCUITS ; ELEMENTS ; FABRICATION ; INTEGRATED CIRCUITS ; JOSEPHSON JUNCTIONS ; JUNCTIONS ; METALS ; MICROELECTRONIC CIRCUITS ; MIM JUNCTIONS ; NIOBIUM ; OXIDES ; OXYGEN COMPOUNDS ; SEMICONDUCTOR JUNCTIONS ; SUPERCONDUCTING JUNCTIONS ; TECHNOLOGY TRANSFER ; TECHNOLOGY UTILIZATION ; TRANSITION ELEMENTS 426001 -- Engineering-- Superconducting Devices & Circuits-- (1990-)</subject><ispartof>Applied physics letters, 1991-11, Vol.59:20</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/5150194$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ketchen, M.B.</creatorcontrib><creatorcontrib>Pearson, D.</creatorcontrib><creatorcontrib>Kleinsasser, A.W.</creatorcontrib><creatorcontrib>Hu, C.</creatorcontrib><creatorcontrib>Smyth, M.</creatorcontrib><creatorcontrib>Logan, J.</creatorcontrib><creatorcontrib>Stawiasz, K.</creatorcontrib><creatorcontrib>Baran, E.</creatorcontrib><creatorcontrib>Jaso, M.</creatorcontrib><creatorcontrib>Ross, T.</creatorcontrib><creatorcontrib>Petrillo, K.</creatorcontrib><creatorcontrib>Manny, M.</creatorcontrib><creatorcontrib>Basavaiah, S.</creatorcontrib><creatorcontrib>Brodsky, S.</creatorcontrib><creatorcontrib>Kaplan, S.B.</creatorcontrib><creatorcontrib>Gallagher, W.J.</creatorcontrib><creatorcontrib>Bhushan, M.</creatorcontrib><title>Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology</title><title>Applied physics letters</title><description>We have demonstrated a new planarized all-refractory technology for low {ital T}{sub {ital c}} superconductivity (PARTS). With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5--100 {mu}m{sup 2}. Junction quality is excellent with the figure of merit {ital V}{sub {ital m}} typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.</description><subject>ALUMINIUM COMPOUNDS</subject><subject>ALUMINIUM OXIDES</subject><subject>CHALCOGENIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>ELECTRONIC CIRCUITS</subject><subject>ELEMENTS</subject><subject>FABRICATION</subject><subject>INTEGRATED CIRCUITS</subject><subject>JOSEPHSON JUNCTIONS</subject><subject>JUNCTIONS</subject><subject>METALS</subject><subject>MICROELECTRONIC CIRCUITS</subject><subject>MIM JUNCTIONS</subject><subject>NIOBIUM</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SUPERCONDUCTING JUNCTIONS</subject><subject>TECHNOLOGY TRANSFER</subject><subject>TECHNOLOGY UTILIZATION</subject><subject>TRANSITION ELEMENTS 426001 -- Engineering-- Superconducting Devices & Circuits-- (1990-)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqNisFKAzEURYMoOFrBT3i4bmrSNK1diijioi7afclk3jiRTBLyMtb69U7BD3BxOdzDYexWipkUS3UvT1gIfcYqKVYrrqR8OGeVEELx5VrLS3ZF9DlePVeqYsftUPMZ9MO4KSRvgsnuB5spbGr-6N-Bhhq-gW9qeIuEqaMYIOVokQjamEHONfQ9HEyLmaDBL_QxYQNuzEwuYbSdS3BwpYOtg4K2C9HHj-OEXbTGE9788ZrdvTzvnl55pOL2ZN0ptTEEtGWvpRZyvVD_in4Bnr5P5A</recordid><startdate>19911111</startdate><enddate>19911111</enddate><creator>Ketchen, M.B.</creator><creator>Pearson, D.</creator><creator>Kleinsasser, A.W.</creator><creator>Hu, C.</creator><creator>Smyth, M.</creator><creator>Logan, J.</creator><creator>Stawiasz, K.</creator><creator>Baran, E.</creator><creator>Jaso, M.</creator><creator>Ross, T.</creator><creator>Petrillo, K.</creator><creator>Manny, M.</creator><creator>Basavaiah, S.</creator><creator>Brodsky, S.</creator><creator>Kaplan, S.B.</creator><creator>Gallagher, W.J.</creator><creator>Bhushan, M.</creator><scope>OTOTI</scope></search><sort><creationdate>19911111</creationdate><title>Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology</title><author>Ketchen, M.B. ; Pearson, D. ; Kleinsasser, A.W. ; Hu, C. ; Smyth, M. ; Logan, J. ; Stawiasz, K. ; Baran, E. ; Jaso, M. ; Ross, T. ; Petrillo, K. ; Manny, M. ; Basavaiah, S. ; Brodsky, S. ; Kaplan, S.B. ; Gallagher, W.J. ; Bhushan, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_51501943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>ALUMINIUM COMPOUNDS</topic><topic>ALUMINIUM OXIDES</topic><topic>CHALCOGENIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>ELECTRONIC CIRCUITS</topic><topic>ELEMENTS</topic><topic>FABRICATION</topic><topic>INTEGRATED CIRCUITS</topic><topic>JOSEPHSON JUNCTIONS</topic><topic>JUNCTIONS</topic><topic>METALS</topic><topic>MICROELECTRONIC CIRCUITS</topic><topic>MIM JUNCTIONS</topic><topic>NIOBIUM</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SUPERCONDUCTING JUNCTIONS</topic><topic>TECHNOLOGY TRANSFER</topic><topic>TECHNOLOGY UTILIZATION</topic><topic>TRANSITION ELEMENTS 426001 -- Engineering-- Superconducting Devices & Circuits-- (1990-)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ketchen, M.B.</creatorcontrib><creatorcontrib>Pearson, D.</creatorcontrib><creatorcontrib>Kleinsasser, A.W.</creatorcontrib><creatorcontrib>Hu, C.</creatorcontrib><creatorcontrib>Smyth, M.</creatorcontrib><creatorcontrib>Logan, J.</creatorcontrib><creatorcontrib>Stawiasz, K.</creatorcontrib><creatorcontrib>Baran, E.</creatorcontrib><creatorcontrib>Jaso, M.</creatorcontrib><creatorcontrib>Ross, T.</creatorcontrib><creatorcontrib>Petrillo, K.</creatorcontrib><creatorcontrib>Manny, M.</creatorcontrib><creatorcontrib>Basavaiah, S.</creatorcontrib><creatorcontrib>Brodsky, S.</creatorcontrib><creatorcontrib>Kaplan, S.B.</creatorcontrib><creatorcontrib>Gallagher, W.J.</creatorcontrib><creatorcontrib>Bhushan, M.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ketchen, M.B.</au><au>Pearson, D.</au><au>Kleinsasser, A.W.</au><au>Hu, C.</au><au>Smyth, M.</au><au>Logan, J.</au><au>Stawiasz, K.</au><au>Baran, E.</au><au>Jaso, M.</au><au>Ross, T.</au><au>Petrillo, K.</au><au>Manny, M.</au><au>Basavaiah, S.</au><au>Brodsky, S.</au><au>Kaplan, S.B.</au><au>Gallagher, W.J.</au><au>Bhushan, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology</atitle><jtitle>Applied physics letters</jtitle><date>1991-11-11</date><risdate>1991</risdate><volume>59:20</volume><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have demonstrated a new planarized all-refractory technology for low {ital T}{sub {ital c}} superconductivity (PARTS). With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5--100 {mu}m{sup 2}. Junction quality is excellent with the figure of merit {ital V}{sub {ital m}} typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.</abstract><cop>United States</cop><doi>10.1063/1.106405</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1991-11, Vol.59:20 |
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| language | eng |
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| source | AIP Digital Archive |
| subjects | ALUMINIUM COMPOUNDS ALUMINIUM OXIDES CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRONIC CIRCUITS ELEMENTS FABRICATION INTEGRATED CIRCUITS JOSEPHSON JUNCTIONS JUNCTIONS METALS MICROELECTRONIC CIRCUITS MIM JUNCTIONS NIOBIUM OXIDES OXYGEN COMPOUNDS SEMICONDUCTOR JUNCTIONS SUPERCONDUCTING JUNCTIONS TECHNOLOGY TRANSFER TECHNOLOGY UTILIZATION TRANSITION ELEMENTS 426001 -- Engineering-- Superconducting Devices & Circuits-- (1990-) |
| title | Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology |
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