Atomic nature of organometallic-vapor-phase-epitaxial growth

Atomic nature of organometallic-vapor-phase-epitaxial growth

In situ X-ray scattering was used to study a growing film (ZnSe on GaAs) during organometallic vapor-phase epitaxy. This first in situ study of non-ultrahigh-vacuum growth revealed a stable and well-ordered p#1(2#8#?1) reconstruction during growth. Changes in specular X-ray reflectivity were found w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review letters 1989-11, Vol.63 (21), p.2389-2392
Hauptverfasser: FUOSS, P. H, KISKER, D. W, RENAUD, G, TOKUDA, K. L, BRENNAN, S, KAHN, J. L
Format: Artikel
Sprache:eng
Schlagworte:
360602 > Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COHERENT SCATTERING
Condensed matter: structure, mechanical and thermal properties
DIFFRACTION
EPITAXY
Exact sciences and technology
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
IN-SITU PROCESSING
MATERIALS SCIENCE
MEDIUM PRESSURE
Physics
PNICTIDES
PROCESSING
SCATTERING
SELENIDES
SELENIUM COMPOUNDS
Solid surfaces and solid-solid interfaces
SORPTIVE PROPERTIES
Surface and interface dynamics and vibrations
SURFACE PROPERTIES
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
THIN FILMS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION
ZINC COMPOUNDS 360601 > Other Materials-- Preparation & Manufacture
ZINC SELENIDES
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In situ X-ray scattering was used to study a growing film (ZnSe on GaAs) during organometallic vapor-phase epitaxy. This first in situ study of non-ultrahigh-vacuum growth revealed a stable and well-ordered p#1(2#8#?1) reconstruction during growth. Changes in specular X-ray reflectivity were found while investigating transient kinetic effects during alternate-source epitaxy. Results demonstrated the power of in situ X-ray scattering studies in the characterization of these processes.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.63.2389