Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Room-temperature continuous-wave oscillation with an emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5-μm-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold cur...

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Veröffentlicht in:	Applied physics letters 1989-12, Vol.55 (24), p.2473-2475
Hauptverfasser:	TAI, K, FISCHER, R. J, SEABURY, C. W, OLSSON, N. A, HUO, T.-C. D, OTA, Y, CHO, A. Y
Format:	Artikel
Sprache:	eng
Schlagworte:	ARSENIC COMPOUNDS ARSENIDES BRAGG REFLECTION CURRENTS DATA ELECTRIC CURRENTS EMISSION ENERGY-LEVEL TRANSITIONS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASER CAVITIES LASERS LOW TEMPERATURE MODULATION NUMERICAL DATA OPERATION Optics OSCILLATION MODES Physics PNICTIDES POWER POWER RANGE MILLI W REFLECTION SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-) STIMULATED EMISSION THRESHOLD CURRENT
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