Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Room-temperature continuous-wave oscillation with an emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5-μm-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold cur...

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Veröffentlicht in:Applied physics letters 1989-12, Vol.55 (24), p.2473-2475
Hauptverfasser: TAI, K, FISCHER, R. J, SEABURY, C. W, OLSSON, N. A, HUO, T.-C. D, OTA, Y, CHO, A. Y
Format: Artikel
Sprache:eng
Schlagworte:
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CURRENTS
DATA
ELECTRIC CURRENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
LOW TEMPERATURE
MODULATION
NUMERICAL DATA
OPERATION
Optics
OSCILLATION MODES
Physics
PNICTIDES
POWER
POWER RANGE MILLI W
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-)
STIMULATED EMISSION
THRESHOLD CURRENT
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Beschreibung
Zusammenfassung:Room-temperature continuous-wave oscillation with an emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5-μm-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold current of 40 mA in 15-μm-diam size and a T0 of 115 K. Fiber butt coupling and pseudorandom data modulation of these lasers with open eyes up to 500 Mbit/s were demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102002