New interface structure for [ital A]-type CoSi[sub 2]/Si(111)

New interface structure for [ital A]-type CoSi[sub 2]/Si(111)

A new model of a CoSi[sub 2]/Si(111) interface structure has been generated using images produced by [ital Z]-contrast scanning transmission electron microscopy. The images indicate that the top and bottom interfaces between the type-[ital A] buried CoSi[sub 2] layer and Si(111) both have eightfold...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1994-05, Vol.64:18
Hauptverfasser: Chisholm, M.F., Pennycook, S.J., Jebasinski, R., Mantl, S.
Format: Artikel
Sprache:eng
Schlagworte:
COBALT COMPOUNDS
COBALT SILICIDES
ELEMENTS
ENERGY RANGE
INTERFACES
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
MATERIALS SCIENCE
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRANSITION ELEMENT COMPOUNDS 360602 > Other Materials-- Structure & Phase Studies
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new model of a CoSi[sub 2]/Si(111) interface structure has been generated using images produced by [ital Z]-contrast scanning transmission electron microscopy. The images indicate that the top and bottom interfaces between the type-[ital A] buried CoSi[sub 2] layer and Si(111) both have eightfold coordinated Co atoms. This is accomplished by converting the one interface structure from sevenfold to eightfold coordination by locating a twinned layer of Si at the interface. The preference for this interface over the sevenfold type-[ital A] structure is in agreement with theoretical predictions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111583