Interfacial reactions between metal and gallium arsenide

The phase formation sequence for GaAs/metal ternary diffusion couples is discussed. The diffusion path concept is introduced and is used with the phase diagram to understand interfacial reactions between GaAs and metal. The correlation between growth kinetics and interface morphology is discussed. S...

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Veröffentlicht in:	Journal of the Electrochemical Society 1989-10, Vol.136 (10), p.3006-3010
Hauptverfasser:	LIN, J.-C, SCHULZ, K. J, HSIEH, K.-C, CHANG, Y. A
Format:	Artikel
Sprache:	eng
Schlagworte:	360102 - Metals & Alloys- Structure & Phase Studies 360602 - Other Materials- Structure & Phase Studies ALLOY SYSTEMS ARSENIC COMPOUNDS ARSENIDES CHEMICAL REACTION KINETICS Chemistry CRYSTAL GROWTH METHODS DIAGRAMS DIFFUSION ELEMENTS Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS Inorganic chemistry and origins of life INTERFACES KINETICS Kinetics and mechanism of reactions MATERIALS SCIENCE METALS MORPHOLOGY PALLADIUM PHASE DIAGRAMS PLATINUM PLATINUM METALS PNICTIDES REACTION KINETICS TERNARY ALLOY SYSTEMS THIN FILMS TRANSITION ELEMENTS
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