Interfacial reactions between metal and gallium arsenide

Interfacial reactions between metal and gallium arsenide

The phase formation sequence for GaAs/metal ternary diffusion couples is discussed. The diffusion path concept is introduced and is used with the phase diagram to understand interfacial reactions between GaAs and metal. The correlation between growth kinetics and interface morphology is discussed. S...

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Veröffentlicht in:Journal of the Electrochemical Society 1989-10, Vol.136 (10), p.3006-3010
Hauptverfasser: LIN, J.-C, SCHULZ, K. J, HSIEH, K.-C, CHANG, Y. A
Format: Artikel
Sprache:eng
Schlagworte:
360102 - Metals & Alloys- Structure & Phase Studies
360602 - Other Materials- Structure & Phase Studies
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTION KINETICS
Chemistry
CRYSTAL GROWTH METHODS
DIAGRAMS
DIFFUSION
ELEMENTS
Exact sciences and technology
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
Inorganic chemistry and origins of life
INTERFACES
KINETICS
Kinetics and mechanism of reactions
MATERIALS SCIENCE
METALS
MORPHOLOGY
PALLADIUM
PHASE DIAGRAMS
PLATINUM
PLATINUM METALS
PNICTIDES
REACTION KINETICS
TERNARY ALLOY SYSTEMS
THIN FILMS
TRANSITION ELEMENTS
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Beschreibung
Zusammenfassung:The phase formation sequence for GaAs/metal ternary diffusion couples is discussed. The diffusion path concept is introduced and is used with the phase diagram to understand interfacial reactions between GaAs and metal. The correlation between growth kinetics and interface morphology is discussed. Studies of bulk and thin film couples in two systems, GaAs/Pd and GaAs/Pt, are given to illustrate these concepts.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2096392