Fast timing circuit using charge storage diode

This paper describes a fast timing circuit with time shift compensation, based on the charge storage effect in semiconductor diodes. Within the dynamic amplitude range 0.09–10 V an output pulse time shift smaller than ±140 ps has been achieved with a light pulse generator. In the 5 GeV π −-meson bea...

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Veröffentlicht in:Nuclear instruments & methods 1970-01, Vol.81 (1), p.121-124
Hauptverfasser: Ondriš, L., Richvickij, S.V., Semenyushkin, I.N., Horvath, P., Khrenov, A.N.
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Sprache:eng
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Zusammenfassung:This paper describes a fast timing circuit with time shift compensation, based on the charge storage effect in semiconductor diodes. Within the dynamic amplitude range 0.09–10 V an output pulse time shift smaller than ±140 ps has been achieved with a light pulse generator. In the 5 GeV π −-meson beam with a 25 × 25 × 25 mm plastic scintillator and a XP 1020 photomultiplier time resolution of 0.33 ns has been measured.
ISSN:0029-554X
DOI:10.1016/0029-554X(70)90618-X