Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power
A variety of (GaAl)As/GaAs heterostructure injection lasers have been fabricated with two pairs of heterojunctions, the inner pair for carrier confinement and the outer pair for optical confinement. Asymmetrical versions of this design have given, at one extreme, threshold current density Jt at 300...
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| Veröffentlicht in: | Journal of applied physics 1976-04, Vol.47 (4), p.1501-1514 |
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| container_title | Journal of applied physics |
| container_volume | 47 |
| creator | Thompson, G. H. B. Henshall, G. D. Whiteaway, J. E. A. Kirkby, P. A. |
| description | A variety of (GaAl)As/GaAs heterostructure injection lasers have been fabricated with two pairs of heterojunctions, the inner pair for carrier confinement and the outer pair for optical confinement. Asymmetrical versions of this design have given, at one extreme, threshold current density Jt at 300 K as low as 500 A/cm2 and at the other extreme far-field angular beam widths to the half-power point of 15° with Jt |
| doi_str_mv | 10.1063/1.322816 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_4046638</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22640768</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2326-fa218a7a012b4341cf62e34ab4ccb392c86cd8cf26c534065ec60682399ca7ce3</originalsourceid><addsrcrecordid>eNotkE1Lw0AURQdRsFbBnzC4kLpIO1-ZTJalaBWKbnQ9TF5fTDRN4kxi6L83Ja7u5nC59xByy9mSMy1XfCmFMFyfkRlnJo2SOGbnZMaY4JFJk_SSXIXwxRjnRqYzkr0675shytAdaF7-YlS5I3q62Lp19bAOqzEDLbBD34TO99D1HmnlAvpAh7IraNUMtCs8hqKp9tTVe1qUnwVt0X3TthnQX5OL3FUBb_5zTj6eHt83z9HubfuyWe8iEFLoKHeCG5c4xkWmpOKQa4FSuUwBZDIVYDTsDeRCQywV0zGCZtoImabgEkA5J3dT7zi0tAHKDqGApq4ROquY0lqaEbqfoNY3Pz2Gzh7KAFhVrsamD1YIrViiT-BiAmE8HjzmtvXlwfmj5cyeTFtuJ9PyDwTxb3M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>22640768</pqid></control><display><type>article</type><title>Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power</title><source>AIP Digital Archive</source><creator>Thompson, G. H. B. ; Henshall, G. D. ; Whiteaway, J. E. A. ; Kirkby, P. A.</creator><creatorcontrib>Thompson, G. H. B. ; Henshall, G. D. ; Whiteaway, J. E. A. ; Kirkby, P. A. ; Materials and Components Laboratory, Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England CM17 9NA</creatorcontrib><description>A variety of (GaAl)As/GaAs heterostructure injection lasers have been fabricated with two pairs of heterojunctions, the inner pair for carrier confinement and the outer pair for optical confinement. Asymmetrical versions of this design have given, at one extreme, threshold current density Jt at 300 K as low as 500 A/cm2 and at the other extreme far-field angular beam widths to the half-power point of 15° with Jt<1000 A/cm2, for 500-μm-long sawn cavity lasers with reflectors on one face. The incremental quantum efficiency from one end of 300-μm-long lasers with reflectors was over 40%. The peak optical power from lasers of 100 μm width was up to 3 W for 200-ns pulses. The temperature variation of threshold over the range 290–355 K was Jt355/Jt290∼1.5. Double-heterostructure lasers with narrow active layers and 20% AlAs confinement steps gave almost comparable performance in Jt and beam width (650 A/cm2 for 33° and 1200 A/cm2 for 15°), but the linearity of light versus current was poorer, the temperature sensitivity of threshold was Jt355/Jt290⩾2, and efficiency also dropped with temperature. The optical distribution has been calculated for various multilayer heterostructure waveguides and related both to the far-field beam width and to the threshold current. A universal gain/current density relation for the active layer has been deduced from the measurements and agrees reasonably with published theory.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.322816</identifier><language>eng</language><publisher>United States: American Institute of Physics (AIP)</publisher><subject>420300 -Engineering-Lasers ; ALUMINIUM ARSENIDES ; FABRICATION ; GAIN ; GALLIUM ARSENIDES ; LAYERS ; N42210 -Engineering-Facilities & Equipment-Lasers ; OPTICAL MODES ; SEMICONDUCTOR LASERS- EFFICIENCY ; SENSITIVITY ; TEMPERATURE DEPENDENCE ; THRESHOLD ENERGY ; WAVEGUIDES</subject><ispartof>Journal of applied physics, 1976-04, Vol.47 (4), p.1501-1514</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2326-fa218a7a012b4341cf62e34ab4ccb392c86cd8cf26c534065ec60682399ca7ce3</citedby><cites>FETCH-LOGICAL-c2326-fa218a7a012b4341cf62e34ab4ccb392c86cd8cf26c534065ec60682399ca7ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/4046638$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Thompson, G. H. B.</creatorcontrib><creatorcontrib>Henshall, G. D.</creatorcontrib><creatorcontrib>Whiteaway, J. E. A.</creatorcontrib><creatorcontrib>Kirkby, P. A.</creatorcontrib><creatorcontrib>Materials and Components Laboratory, Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England CM17 9NA</creatorcontrib><title>Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power</title><title>Journal of applied physics</title><description>A variety of (GaAl)As/GaAs heterostructure injection lasers have been fabricated with two pairs of heterojunctions, the inner pair for carrier confinement and the outer pair for optical confinement. Asymmetrical versions of this design have given, at one extreme, threshold current density Jt at 300 K as low as 500 A/cm2 and at the other extreme far-field angular beam widths to the half-power point of 15° with Jt<1000 A/cm2, for 500-μm-long sawn cavity lasers with reflectors on one face. The incremental quantum efficiency from one end of 300-μm-long lasers with reflectors was over 40%. The peak optical power from lasers of 100 μm width was up to 3 W for 200-ns pulses. The temperature variation of threshold over the range 290–355 K was Jt355/Jt290∼1.5. Double-heterostructure lasers with narrow active layers and 20% AlAs confinement steps gave almost comparable performance in Jt and beam width (650 A/cm2 for 33° and 1200 A/cm2 for 15°), but the linearity of light versus current was poorer, the temperature sensitivity of threshold was Jt355/Jt290⩾2, and efficiency also dropped with temperature. The optical distribution has been calculated for various multilayer heterostructure waveguides and related both to the far-field beam width and to the threshold current. A universal gain/current density relation for the active layer has been deduced from the measurements and agrees reasonably with published theory.</description><subject>420300 -Engineering-Lasers</subject><subject>ALUMINIUM ARSENIDES</subject><subject>FABRICATION</subject><subject>GAIN</subject><subject>GALLIUM ARSENIDES</subject><subject>LAYERS</subject><subject>N42210 -Engineering-Facilities & Equipment-Lasers</subject><subject>OPTICAL MODES</subject><subject>SEMICONDUCTOR LASERS- EFFICIENCY</subject><subject>SENSITIVITY</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>THRESHOLD ENERGY</subject><subject>WAVEGUIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1976</creationdate><recordtype>article</recordtype><recordid>eNotkE1Lw0AURQdRsFbBnzC4kLpIO1-ZTJalaBWKbnQ9TF5fTDRN4kxi6L83Ja7u5nC59xByy9mSMy1XfCmFMFyfkRlnJo2SOGbnZMaY4JFJk_SSXIXwxRjnRqYzkr0675shytAdaF7-YlS5I3q62Lp19bAOqzEDLbBD34TO99D1HmnlAvpAh7IraNUMtCs8hqKp9tTVe1qUnwVt0X3TthnQX5OL3FUBb_5zTj6eHt83z9HubfuyWe8iEFLoKHeCG5c4xkWmpOKQa4FSuUwBZDIVYDTsDeRCQywV0zGCZtoImabgEkA5J3dT7zi0tAHKDqGApq4ROquY0lqaEbqfoNY3Pz2Gzh7KAFhVrsamD1YIrViiT-BiAmE8HjzmtvXlwfmj5cyeTFtuJ9PyDwTxb3M</recordid><startdate>19760401</startdate><enddate>19760401</enddate><creator>Thompson, G. H. B.</creator><creator>Henshall, G. D.</creator><creator>Whiteaway, J. E. A.</creator><creator>Kirkby, P. A.</creator><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>19760401</creationdate><title>Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power</title><author>Thompson, G. H. B. ; Henshall, G. D. ; Whiteaway, J. E. A. ; Kirkby, P. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2326-fa218a7a012b4341cf62e34ab4ccb392c86cd8cf26c534065ec60682399ca7ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1976</creationdate><topic>420300 -Engineering-Lasers</topic><topic>ALUMINIUM ARSENIDES</topic><topic>FABRICATION</topic><topic>GAIN</topic><topic>GALLIUM ARSENIDES</topic><topic>LAYERS</topic><topic>N42210 -Engineering-Facilities & Equipment-Lasers</topic><topic>OPTICAL MODES</topic><topic>SEMICONDUCTOR LASERS- EFFICIENCY</topic><topic>SENSITIVITY</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>THRESHOLD ENERGY</topic><topic>WAVEGUIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Thompson, G. H. B.</creatorcontrib><creatorcontrib>Henshall, G. D.</creatorcontrib><creatorcontrib>Whiteaway, J. E. A.</creatorcontrib><creatorcontrib>Kirkby, P. A.</creatorcontrib><creatorcontrib>Materials and Components Laboratory, Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England CM17 9NA</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Thompson, G. H. B.</au><au>Henshall, G. D.</au><au>Whiteaway, J. E. A.</au><au>Kirkby, P. A.</au><aucorp>Materials and Components Laboratory, Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England CM17 9NA</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power</atitle><jtitle>Journal of applied physics</jtitle><date>1976-04-01</date><risdate>1976</risdate><volume>47</volume><issue>4</issue><spage>1501</spage><epage>1514</epage><pages>1501-1514</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A variety of (GaAl)As/GaAs heterostructure injection lasers have been fabricated with two pairs of heterojunctions, the inner pair for carrier confinement and the outer pair for optical confinement. Asymmetrical versions of this design have given, at one extreme, threshold current density Jt at 300 K as low as 500 A/cm2 and at the other extreme far-field angular beam widths to the half-power point of 15° with Jt<1000 A/cm2, for 500-μm-long sawn cavity lasers with reflectors on one face. The incremental quantum efficiency from one end of 300-μm-long lasers with reflectors was over 40%. The peak optical power from lasers of 100 μm width was up to 3 W for 200-ns pulses. The temperature variation of threshold over the range 290–355 K was Jt355/Jt290∼1.5. Double-heterostructure lasers with narrow active layers and 20% AlAs confinement steps gave almost comparable performance in Jt and beam width (650 A/cm2 for 33° and 1200 A/cm2 for 15°), but the linearity of light versus current was poorer, the temperature sensitivity of threshold was Jt355/Jt290⩾2, and efficiency also dropped with temperature. The optical distribution has been calculated for various multilayer heterostructure waveguides and related both to the far-field beam width and to the threshold current. A universal gain/current density relation for the active layer has been deduced from the measurements and agrees reasonably with published theory.</abstract><cop>United States</cop><pub>American Institute of Physics (AIP)</pub><doi>10.1063/1.322816</doi><tpages>14</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1976-04, Vol.47 (4), p.1501-1514 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | 420300 -Engineering-Lasers ALUMINIUM ARSENIDES FABRICATION GAIN GALLIUM ARSENIDES LAYERS N42210 -Engineering-Facilities & Equipment-Lasers OPTICAL MODES SEMICONDUCTOR LASERS- EFFICIENCY SENSITIVITY TEMPERATURE DEPENDENCE THRESHOLD ENERGY WAVEGUIDES |
| title | Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power |
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