Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power

Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power

A variety of (GaAl)As/GaAs heterostructure injection lasers have been fabricated with two pairs of heterojunctions, the inner pair for carrier confinement and the outer pair for optical confinement. Asymmetrical versions of this design have given, at one extreme, threshold current density Jt at 300...

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Veröffentlicht in:Journal of applied physics 1976-04, Vol.47 (4), p.1501-1514
Hauptverfasser: Thompson, G. H. B., Henshall, G. D., Whiteaway, J. E. A., Kirkby, P. A.
Format: Artikel
Sprache:eng
Schlagworte:
420300 -Engineering-Lasers
ALUMINIUM ARSENIDES
FABRICATION
GAIN
GALLIUM ARSENIDES
LAYERS
N42210 -Engineering-Facilities & Equipment-Lasers
OPTICAL MODES
SEMICONDUCTOR LASERS- EFFICIENCY
SENSITIVITY
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
WAVEGUIDES
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Zusammenfassung:A variety of (GaAl)As/GaAs heterostructure injection lasers have been fabricated with two pairs of heterojunctions, the inner pair for carrier confinement and the outer pair for optical confinement. Asymmetrical versions of this design have given, at one extreme, threshold current density Jt at 300 K as low as 500 A/cm2 and at the other extreme far-field angular beam widths to the half-power point of 15° with Jt
ISSN:0021-8979
1089-7550
DOI:10.1063/1.322816