Central-cell corrections and shallow donor states in strong magnetic fields
Ionization energies and the central-cell corrections have been calculated for a few shallow donors in Si, GaP, and GaAs. We have assumed a short range potential with two parameters for the strength and the range for each donor, representing the central-cell effects. These parameters are fixed using...
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Veröffentlicht in: | Journal of applied physics 2001-06, Vol.89 (11), p.6198-6203 |
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Sprache: | eng |
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Zusammenfassung: | Ionization energies and the central-cell corrections have been calculated for a few shallow donors in Si, GaP, and GaAs. We have assumed a short range potential with two parameters for the strength and the range for each donor, representing the central-cell effects. These parameters are fixed using the experimentally available ionization energies for each donor in a semiconductor. In the presence of a magnetic field the donor ionization energies are estimated using a variational procedure. Our results show that the ionization energies and the central-cell corrections increase with magnetic field. Our results are compared for GaAs with the recent work by Heron et al. [R. J. Heron, R. A. Lewis, P. E. Simmonds, R. P. Starret, A. V. Skougarevsky, R. G. Clark, and C. R. Stanley, J. Appl. Phys. 85, 893 (1999)]. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1359168 |