Spin-polarized current induced switching in Co/Cu/Co pillars

Spin-polarized current induced switching in Co/Cu/Co pillars

We present experiments of magnetization reversal by spin injection performed on pillar-shaped Co/Cu/Co trilayers. The pillars (200×600 nm2) are fabricated by electron beam lithography and reactive ion etching. Our data for the magnetization reversal at a threshold current confirm previous results on...

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Veröffentlicht in:Applied physics letters 2001-06, Vol.78 (23), p.3663-3665
Hauptverfasser: Grollier, J., Cros, V., Hamzic, A., George, J. M., Jaffrès, H., Fert, A., Faini, G., Ben Youssef, J., Legall, H.
Format: Artikel
Sprache:eng
Schlagworte:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONFIGURATION
ELECTRON BEAMS
ETCHING
MAGNETIZATION
MAGNETORESISTANCE
PHYSICS
POLARIZATION
SPIN
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Beschreibung
Zusammenfassung:We present experiments of magnetization reversal by spin injection performed on pillar-shaped Co/Cu/Co trilayers. The pillars (200×600 nm2) are fabricated by electron beam lithography and reactive ion etching. Our data for the magnetization reversal at a threshold current confirm previous results on similar pillars. In addition, we present another type of experiment that also clearly evidences the control of the magnetic configuration by the current intensity. Our interpretation is based on a version of the Slonczewski model in which the polarization of the current is calculated in the Valet–Fert model of the giant magnetoresistance with current applied perpendicular to plane.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1374230