Evolution of Surface Chemistry in Two‐Dimensional MXenes: From Mixed to Tunable Uniform Terminations
Surface chemistry of MXenes is of great interest as the terminations can define the intrinsic properties of this family of materials. The diverse and tunable terminations also distinguish MXenes from many other 2D materials. Conventional fluoride‐containing reagents etching approaches resulted in MX...
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Veröffentlicht in: | Angewandte Chemie 2024-09, Vol.136 (37), p.n/a |
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Sprache: | eng |
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Zusammenfassung: | Surface chemistry of MXenes is of great interest as the terminations can define the intrinsic properties of this family of materials. The diverse and tunable terminations also distinguish MXenes from many other 2D materials. Conventional fluoride‐containing reagents etching approaches resulted in MXenes with mixed fluoro‐, oxo‐, and hydroxyl surface groups. The relatively strong chemical bonding of MXenes’ surface metal atoms with oxygen and fluorine makes post‐synthetic covalent surface modifications of such MXenes unfavorable. In this minireview, we focus on the recent advances in MXenes with uniform surface terminations. Unconventional methods, including Lewis acidic molten salt etching (LAMS) and bottom‐up direct synthesis, have been proven successful in producing halide‐terminated MXenes. These synthetic strategies have opened new possibilities for MXenes because weaker surface chemical bonds in halide‐terminated MXenes facilitate post‐synthetic covalent surface modifications. Both computational and experimental results on surface termination‐dependent properties are summarized and discussed. Finally, we offer our perspective on the opportunities and challenges in this exciting research field.
Covalently modifiable surface terminations distinguish MXenes from many other 2D materials and define their intrinsic properties. This minireview highlights recent advances in MXenes with uniform inorganic or organic surface terminations and provides perspectives on future opportunities and challenges in this field. |
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ISSN: | 0044-8249 1521-3757 |
DOI: | 10.1002/ange.202409480 |