High-performance metal halide perovskite transistors

Advances in metal halide perovskite semiconductors for optoelectronic devices have revived research interest in their applicability in transistors. Despite initial challenges affecting perovskite-based transistors in terms of reproducibility and ambient-temperature operation capability, notable performance improvements have been achieved through the fine-tuning of channel material compositions, thin-film processing and device engineering. However, critical insight into the electrical properties of the materials is lacking, and their potential for application in large-area and microscale electronics remains unclear. Here we explore the development of metal halide perovskite transistors and compare their characteristics with those of mainstream semiconductor technologies. We examine the electronic and structural properties of halide perovskites, and discuss key perovskite transistors developed so far, focusing on defect chemistry and corresponding electrical properties. We also consider the challenges that exist in developing next-generation electronics and circuits with perovskites, and highlight potential research areas for future development. This Perspective explores the development of metal halide perovskite transistors, examining the properties of halide perovskites and key perovskite transistors, and considering the challenges that exist in developing next-generation electronics and circuits using these devices.