Flavour-selective localization in interacting lattice fermions

A large repulsion between particles in a quantum system can lead to their localization, an effect responsible for the Mott insulator phases in strongly correlated materials. In a system with multiple orbitals, an orbital-selective Mott insulator can form, where electrons in some orbitals are predict...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nature physics 2022-10, Vol.18 (10), p.1201-1205
Hauptverfasser: Tusi, D., Franchi, L., Livi, L. F., Baumann, K., Benedicto Orenes, D., Del Re, L., Barfknecht, R. E., Zhou, T.-W., Inguscio, M., Cappellini, G., Capone, M., Catani, J., Fallani, L.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A large repulsion between particles in a quantum system can lead to their localization, an effect responsible for the Mott insulator phases in strongly correlated materials. In a system with multiple orbitals, an orbital-selective Mott insulator can form, where electrons in some orbitals are predicted to localize while others remain itinerant. Here we demonstrate a more general version of this phenomenon by observing flavour-selective localization in an atom-based quantum simulator. Our experiment realizes Fermi–Hubbard models with an SU(3) symmetry that can be broken using a tunable coupling between flavours. We observe an enhancement of the localization associated with a selective Mott transition and the emergence of flavour-dependent correlations. Our realization of flavour-selective Mott physics demonstrates the potential of cold atoms to simulate interacting multicomponent materials such as superconductors and topological insulators. A Mott insulator forms when strong interactions between particles cause them to become localized. A cold atom simulator has now been used to realize a selective Mott insulator in which atoms are localized or propagating depending on their spin state.
ISSN:1745-2473
1745-2481
1476-4636
DOI:10.1038/s41567-022-01726-5