Study of the physical properties of CuS thin films grown by SILAR method
CuS thin films were obtained using the SILAR method on an amorphous glass substrate. All experiments were performed at room temperature. CuS thin films were deposited at 30, 40, 50 and 60 cycles, respectively. Structural, morphological and optical properties of the structures that increase the thick...
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| Veröffentlicht in: | Optical and quantum electronics 2019-07, Vol.51 (7), p.1-9, Article 245 |
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| creator | Çayır Taşdemirci, Tuba |
| description | CuS thin films were obtained using the SILAR method on an amorphous glass substrate. All experiments were performed at room temperature. CuS thin films were deposited at 30, 40, 50 and 60 cycles, respectively. Structural, morphological and optical properties of the structures that increase the thickness of nanostructured CuS thin films were investigated. X-ray diffraction, scanning electron microscopy, atomic force microscopy, RAMAN and optical absorption measurements were carried out in order to examine the physical properties of CuS thin films. As a result of the analysis, we can say that the thickness increase positively affects the crystal structure of CuS thin films. In addition, the energy bandgap range of CuS thin films ranged from 2.22 to 1.78 eV. Analysis results of CuS thin films using SILAR method show that thickness is an important factor for thin film studies. |
| doi_str_mv | 10.1007/s11082-019-1963-0 |
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All experiments were performed at room temperature. CuS thin films were deposited at 30, 40, 50 and 60 cycles, respectively. Structural, morphological and optical properties of the structures that increase the thickness of nanostructured CuS thin films were investigated. X-ray diffraction, scanning electron microscopy, atomic force microscopy, RAMAN and optical absorption measurements were carried out in order to examine the physical properties of CuS thin films. As a result of the analysis, we can say that the thickness increase positively affects the crystal structure of CuS thin films. In addition, the energy bandgap range of CuS thin films ranged from 2.22 to 1.78 eV. Analysis results of CuS thin films using SILAR method show that thickness is an important factor for thin film studies.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-019-1963-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>ABSORPTION ; ATOMIC FORCE MICROSCOPY ; Characterization and Evaluation of Materials ; Computer Communication Networks ; COPPER SULFIDES ; CRYSTAL STRUCTURE ; Electrical Engineering ; GLASS ; Glass substrates ; Lasers ; Microscopy ; NANOSCIENCE AND NANOTECHNOLOGY ; NANOSTRUCTURES ; Optical Devices ; OPTICAL PROPERTIES ; Optics ; Photonics ; Physical properties ; Physics ; Physics and Astronomy ; SCANNING ELECTRON MICROSCOPY ; SUBSTRATES ; TEMPERATURE RANGE 0273-0400 K ; THICKNESS ; THIN FILMS ; X-RAY DIFFRACTION</subject><ispartof>Optical and quantum electronics, 2019-07, Vol.51 (7), p.1-9, Article 245</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-29c7f83c6d32ebfe16ce3ae032038846b73ecc88db0ff902556525657e51ca153</citedby><cites>FETCH-LOGICAL-c344t-29c7f83c6d32ebfe16ce3ae032038846b73ecc88db0ff902556525657e51ca153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-019-1963-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-019-1963-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22950185$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Çayır Taşdemirci, Tuba</creatorcontrib><title>Study of the physical properties of CuS thin films grown by SILAR method</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>CuS thin films were obtained using the SILAR method on an amorphous glass substrate. All experiments were performed at room temperature. CuS thin films were deposited at 30, 40, 50 and 60 cycles, respectively. Structural, morphological and optical properties of the structures that increase the thickness of nanostructured CuS thin films were investigated. X-ray diffraction, scanning electron microscopy, atomic force microscopy, RAMAN and optical absorption measurements were carried out in order to examine the physical properties of CuS thin films. As a result of the analysis, we can say that the thickness increase positively affects the crystal structure of CuS thin films. In addition, the energy bandgap range of CuS thin films ranged from 2.22 to 1.78 eV. Analysis results of CuS thin films using SILAR method show that thickness is an important factor for thin film studies.</description><subject>ABSORPTION</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>COPPER SULFIDES</subject><subject>CRYSTAL STRUCTURE</subject><subject>Electrical Engineering</subject><subject>GLASS</subject><subject>Glass substrates</subject><subject>Lasers</subject><subject>Microscopy</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>NANOSTRUCTURES</subject><subject>Optical Devices</subject><subject>OPTICAL PROPERTIES</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SUBSTRATES</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>THICKNESS</subject><subject>THIN FILMS</subject><subject>X-RAY DIFFRACTION</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kFFLwzAUhYMoOKc_wLeAz9GbpGmTxzHUDQaCU_AttGm6dmxtTVKk_96MCvriw-U-nO8c7j0I3VK4pwDZg6cUJCNAFaEq5QTO0IyKjBFJs49zNAMOKZGKqkt05f0eANJEwAyttmEoR9xVONQW9_XoG5MfcO-63rrQWH-SlsM2yk2Lq-Zw9Hjnuq8WFyPerjeLV3y0oe7Ka3RR5Qdvb372HL0_Pb4tV2Tz8rxeLjbE8CQJhCmTVZKbtOTMFpWlqbE8t8AZcCmTtMi4NUbKsoCqUsCESAWLk1lBTU4Fn6O7KbfzodHeNMGa2nRta03QjCkBVP6h4iOfg_VB77vBtfGwyAiuOCiRRYpOlHGd985WunfNMXejpqBPteqpVh1r1adaNUQPmzw-su3Out_k_03fJlx4NA</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Çayır Taşdemirci, Tuba</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20190701</creationdate><title>Study of the physical properties of CuS thin films grown by SILAR method</title><author>Çayır Taşdemirci, Tuba</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-29c7f83c6d32ebfe16ce3ae032038846b73ecc88db0ff902556525657e51ca153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>ABSORPTION</topic><topic>ATOMIC FORCE MICROSCOPY</topic><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>COPPER SULFIDES</topic><topic>CRYSTAL STRUCTURE</topic><topic>Electrical Engineering</topic><topic>GLASS</topic><topic>Glass substrates</topic><topic>Lasers</topic><topic>Microscopy</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>NANOSTRUCTURES</topic><topic>Optical Devices</topic><topic>OPTICAL PROPERTIES</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SUBSTRATES</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>THICKNESS</topic><topic>THIN FILMS</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Çayır Taşdemirci, Tuba</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Çayır Taşdemirci, Tuba</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of the physical properties of CuS thin films grown by SILAR method</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2019-07-01</date><risdate>2019</risdate><volume>51</volume><issue>7</issue><spage>1</spage><epage>9</epage><pages>1-9</pages><artnum>245</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>CuS thin films were obtained using the SILAR method on an amorphous glass substrate. All experiments were performed at room temperature. CuS thin films were deposited at 30, 40, 50 and 60 cycles, respectively. Structural, morphological and optical properties of the structures that increase the thickness of nanostructured CuS thin films were investigated. X-ray diffraction, scanning electron microscopy, atomic force microscopy, RAMAN and optical absorption measurements were carried out in order to examine the physical properties of CuS thin films. As a result of the analysis, we can say that the thickness increase positively affects the crystal structure of CuS thin films. In addition, the energy bandgap range of CuS thin films ranged from 2.22 to 1.78 eV. Analysis results of CuS thin films using SILAR method show that thickness is an important factor for thin film studies.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-019-1963-0</doi><tpages>9</tpages></addata></record> |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | ABSORPTION ATOMIC FORCE MICROSCOPY Characterization and Evaluation of Materials Computer Communication Networks COPPER SULFIDES CRYSTAL STRUCTURE Electrical Engineering GLASS Glass substrates Lasers Microscopy NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES Optical Devices OPTICAL PROPERTIES Optics Photonics Physical properties Physics Physics and Astronomy SCANNING ELECTRON MICROSCOPY SUBSTRATES TEMPERATURE RANGE 0273-0400 K THICKNESS THIN FILMS X-RAY DIFFRACTION |
| title | Study of the physical properties of CuS thin films grown by SILAR method |
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