Study of the physical properties of CuS thin films grown by SILAR method

CuS thin films were obtained using the SILAR method on an amorphous glass substrate. All experiments were performed at room temperature. CuS thin films were deposited at 30, 40, 50 and 60 cycles, respectively. Structural, morphological and optical properties of the structures that increase the thickness of nanostructured CuS thin films were investigated. X-ray diffraction, scanning electron microscopy, atomic force microscopy, RAMAN and optical absorption measurements were carried out in order to examine the physical properties of CuS thin films. As a result of the analysis, we can say that the thickness increase positively affects the crystal structure of CuS thin films. In addition, the energy bandgap range of CuS thin films ranged from 2.22 to 1.78 eV. Analysis results of CuS thin films using SILAR method show that thickness is an important factor for thin film studies.