Conduction-Electron Spin Resonance in HgSe Crystals
Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at s...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (13), p.1672-1676 |
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| container_end_page | 1676 |
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| container_issue | 13 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 52 |
| creator | Veinger, A. I. Kochman, I. V. Okulov, V. I. Andriichuk, M. D. Paranchich, L. D. |
| description | Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical. |
| doi_str_mv | 10.1134/S1063782618130225 |
| format | Article |
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D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conduction-Electron Spin Resonance in HgSe Crystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>52</volume><issue>13</issue><spage>1672</spage><epage>1676</epage><pages>1672-1676</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. 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| ispartof | Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1672-1676 |
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| source | Springer Online Journals Complete |
| subjects | CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTALS Electron paramagnetic resonance Electron spin ELECTRON SPIN RESONANCE Electronic Properties of Semiconductors ELECTRONS HYDROGEN IMPURITIES IRON Magnetic Materials Magnetism MERCURY SELENIDES Physics Physics and Astronomy Resonance lines SEMICONDUCTOR MATERIALS Spin resonance |
| title | Conduction-Electron Spin Resonance in HgSe Crystals |
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